n-channel 30v - 0.018 w - 7a so-8 p-channel 30v - 0.070 w - 4a so-8 stripfet? power mosfet 1/10 june 2001 . STS7C4F30L n typical r ds (on) (n-channel) = 0.018 w n typical r ds (on) (p-channel) = 0.070 w n standard outline for easy automated surface mount assembly n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n dc/dc converters n battery management in nomadic equipment n power management in cellular phones type v dss r ds(on) i d STS7C4F30L(n-channel) STS7C4F30L(p-channel) 30 v 30 v <0.022 w <0.080 w 7 a 4 a so-8 absolute maximum ratings ( ) pulse width limited by safe operating area. note: p-channel mosfet actual polarity of voltages and current has to be reversed symbol parameter n-channel p-channel unit v ds drain-source voltage (v gs = 0) 30 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 30 v v gs gate- source voltage 20 20 v i d drain current (continuos) at t c = 25c single operating 74a i d drain current (continuos) at t c = 100c single operating 4.4 2.5 a i dm ( ) drain current (pulsed) 28 16 a p tot total dissipation at t c = 25c dual operating total dissipation at t c = 25c single operating 1.6 2 w w t stg storage temperature -60 to 150 c t j max. operating junction temperature 150 c internal schematic diagram 4 .com u datasheet
STS7C4F30L 2/10 thermal data (1) when mounted on 0.5 in 2 pad of 2 oz. copper electrical characteristics (t case = 25 c unless otherwise specified) off on dynamic rthj-amb (1) t l thermal resistance junction-ambient single operation dual operating maximum lead temperature for soldering purpose 62.5 78 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 n-ch p-ch 30 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v v gs = 20v n-ch p-ch 100 100 na na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a n-ch p-ch 1 1 1.6 1.6 2.5 2.5 v v r ds(on) static drain-source on resistance v gs = 10 v i d = 3.5 a v gs = 10 v i d = 2 a v gs = 4.5 v i d = 3.5 a v gs = 4.5 v i d = 2 a n-ch p-ch n-ch p-ch 0.018 0.070 0.021 0.085 0.022 0.080 0.026 0.10 w w w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 3.5 a v ds = 15 v i d = 2 a n-ch p-ch 10 10 s s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 n-ch p-ch n-ch p-ch n-ch p-ch 1050 1350 250 490 85 130 pf pf pf pf pf pf 4 .com u datasheet
3/10 STS7C4F30L switching on switching off source drain diode ( *) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time n-channel v dd = 15 v i d = 3.5 a r g = 4.7 w v gs = 4.5 v p-channel v dd = 15 v i d = 2 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 1) n-ch p-ch n-ch p-ch 22 25 60 35 ns ns ns ns qg q gs q gd total gate charge gate-source charge gate-drain charge n-channel v dd = 24v i d = 7a v gs = 5v p-channel v dd = 24v i d = 4a v gs = 5v (see test circuit, figure 2) n-ch p-ch n-ch p-ch n-ch p-ch 17.5 12.5 4 5 7 3 23 16 nc nc nc nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time n-channel v dd = 15 v i d = 3.5 a r g = 4.7 w v gs = 4.5 v p-channel v dd = 15 v i d = 2 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 1) n-ch p-ch n-ch p-ch 42 125 10 35 ns ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) n-ch p-ch n-ch p-ch 7 4 28 16 a a a a v sd ( *) forward on voltage i sd = 7 a v gs = 0 i sd = 4 a v gs = 0 n-ch p-ch 1.2 1.2 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current n-channel i sd = 7 a di/dt = 100a/ m s v dd =15 vt j =150 o c p-channel i sd = 4 a di/dt = 100a/ m s v dd =15 v t j =150 o c (see test circuit, figure 3) n-ch p-ch n-ch p-ch n-ch p-ch 50 45 40 36 1.6 1.6 ns ns nc nc a a electrical characteristics (continued) 4 .com u datasheet
STS7C4F30L 4/10 safe operating area n-ch thermal impedance n-ch output characteristics n-ch transfer characteristics n-ch transconductance n-ch static drain-source on resistance n-ch 4 .com u datasheet
5/10 STS7C4F30L gate charge vs gate-source voltage n-ch capacitance variations n-ch normalized gate threshold voltage vs temperature n-ch normalized on resistance vs temperature n-ch source-drain diode forward characteristics n-ch 4 .com u datasheet
STS7C4F30L 6/10 safe operating area p-ch thermal impedance p-ch output characteristics p-ch transfer characteristics p-ch transconductance p-ch static drain-source on resistance p-ch 4 .com u datasheet
7/10 STS7C4F30L gate charge vs gate-source voltage p-ch capacitance variations p-ch normalized gate threshold voltage vs temperature p-ch normalized on resistance vs temperature p-ch source-drain diode forward characteristics p-ch 4 .com u datasheet
STS7C4F30L 8/10 fig. 2: gate charge test circuit fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuits for resistive load 4 .com u datasheet
9/10 STS7C4F30L dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data 4 .com u datasheet
STS7C4F30L 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com 4 .com u datasheet
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